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	Forming method for resist pattern
	TSUJI SHINJI; OKAI MAKOTO; HATTORI SHINICHI; HIRAO MOTONAO; OISHI AKIO; MATSUMURA HIROYOSHI
	1987-04-18
著作权人	HITACHI LTD
专利号	JP1987084515A
国家	日本
文献子类	发明申请
其他题名	Forming method for resist pattern
英文摘要	PURPOSE:To obtain a diffraction element whose phase is inverted in the middle, by applying a negative resist and a positive resist separately on the surface of a solid by a liftoff method. CONSTITUTION:An Az positive resist 2 and a spacer 3 formed of spin-on glass are applied on a substrate 1, and after heat treatment is conducted, an AZ positive resist is applied. Next, the resist 4 is patterned. After the spacer 3 is patterned, the exposed portion of the resist 2 and the resist 4 are removed. Then, after a negative resist 5 is applied separately, the spacer 3 is etched, part of the negative resist 5 is lifted off, and thus the coats of the positive resist 2 and the negative resist 5 are provided separately and alternately on the substrate The resists thus prepared are subjected to exposure and development, and thereby a diffraction grating having a phase shift of pi spatially is obtained.
公开日期	1987-04-18
申请日期	1985-10-09
状态	失效
内容类型	专利
源URL	[http://ir.opt.ac.cn/handle/181661/64714]
专题	半导体激光器专利数据库
作者单位	HITACHI LTD
推荐引用方式 GB/T 7714	TSUJI SHINJI,OKAI MAKOTO,HATTORI SHINICHI,et al. Forming method for resist pattern. JP1987084515A. 1987-04-18.

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