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	Mask for manufacturing process of semiconductor device
	TADATOMO KAZUYUKI; TANIGUCHI KOICHI; TOYAMA OSAMU; IKUNISHI SHIYOUGO
	1991-04-19
著作权人	MITSUBISHI CABLE IND LTD
专利号	JP1991094482A
国家	日本
文献子类	发明申请
其他题名	Mask for manufacturing process of semiconductor device
英文摘要	PURPOSE:To shorten the etching and diffusion of a semiconductor and the forming processes of a light reflecting surface and a resonator by laminating dielectric films having at least two kinds of refractive indices so as to have specific values respectively to the emission wavelength of the semiconductor. CONSTITUTION:An N-type AlGaAs clad layer 1, an N-type AlGaAs active layer 2 and a P-type AlGaAs layer 3 are epitaxial-grown successively onto an N-type GaAs substrate B, thus forming multilayer structure having a double- hetero junction. A dielectric film composed of SiO2 is shaped onto the top face of the AlGaAs layer 3 through an electron beam evaporation method, etc., so that lambda/4 holds in the emission wavelength lambda of a semiconductor, and a dielectric film consisting of another material and having another refractive index is formed similarly onto the dielectric film so that lambda/4 holds. The process is repeated only by a specified number, and the dielectric films are laminated, and used as a mask. Accordingly, the mask having not only a shielding function required at the time of subsequent etching and diffusion process but also a function as a semiconductor mirror surface is formed.
公开日期	1991-04-19
申请日期	1989-09-06
状态	失效
内容类型	专利
源URL	[http://ir.opt.ac.cn/handle/181661/64694]
专题	半导体激光器专利数据库
作者单位	MITSUBISHI CABLE IND LTD
推荐引用方式 GB/T 7714	TADATOMO KAZUYUKI,TANIGUCHI KOICHI,TOYAMA OSAMU,et al. Mask for manufacturing process of semiconductor device. JP1991094482A. 1991-04-19.

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