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	Semiconductor laser array having power and high beam quality
	BOTEZ, DAN; JANSEN, MICHAEL; MAWST, LUKE J.; PETERSON, GARY LEE; SIMMONS, WILLIAM WALTER; WILCOX, JAROSLAVA ZITKOVA; YANG, JANE JAN JAN
	1991-10-09
著作权人	TRW INC.
专利号	EP0450668A2
国家	欧洲专利局
文献子类	发明申请
其他题名	Semiconductor laser array having power and high beam quality
英文摘要	A practically uniform near-field intensity distribution is obtained from a laser array by utilizing a resonance condition that occurs in an array of antiguides structured to fall within or near a narrow range of parameters that favor the condition. More specifically, for a give operating wavelength, the width, interelement spacing, and refractive indices of the antiguides are selected to produce an operating point at or close to the resonance condition, in which there is coupling not just between adjacent waveguides, but between all of the waveguides, i.e. coupling from each waveguide element to all other elements in the array. With this complete of parallel coupling, device coherence is maximized and a practically uniform near-field distribution is obtained.
公开日期	1991-10-09
申请日期	1989-09-28
状态	失效
内容类型	专利
源URL	[http://ir.opt.ac.cn/handle/181661/64482]
专题	半导体激光器专利数据库
作者单位	TRW INC.
推荐引用方式 GB/T 7714	BOTEZ, DAN,JANSEN, MICHAEL,MAWST, LUKE J.,et al. Semiconductor laser array having power and high beam quality. EP0450668A2. 1991-10-09.

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