| LOW TEMPERATURE GROWN LAYERS WITH MIGRATION ENHANCED EPITAXY ADJACENT TO AN InGaAsN(Sb) BASED ACTIVE REGION | |
| JOHNSON RALPH | |
| 2006-07-06 | |
| 著作权人 | FINISAR CORPORATION |
| 专利号 | WO2006026610A3 |
| 国家 | 世界知识产权组织 |
| 文献子类 | 发明申请 |
| 其他题名 | LOW TEMPERATURE GROWN LAYERS WITH MIGRATION ENHANCED EPITAXY ADJACENT TO AN InGaAsN(Sb) BASED ACTIVE REGION |
| 英文摘要 | A laser system having migration enhanced epitaxy grown substantially flat layers proximate to quantum wells of an active region. The flat layers may be grown at low temperature. This growth may result in flatter interfaces in the nitrogen containing quantum wells within the active region as well as lower trap densities in adjacent material. This may achieve a reduced trap density as well as reduced segregation resulting in a spectral luminescence profile revealing a single narrow peak with a high level of photoluminescence. |
| 公开日期 | 2006-07-06 |
| 申请日期 | 2005-08-31 |
| 状态 | 未确认 |
| 内容类型 | 专利 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/64446]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | FINISAR CORPORATION |
| 推荐引用方式 GB/T 7714 | JOHNSON RALPH. LOW TEMPERATURE GROWN LAYERS WITH MIGRATION ENHANCED EPITAXY ADJACENT TO AN InGaAsN(Sb) BASED ACTIVE REGION. WO2006026610A3. 2006-07-06. |
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