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	A method for the production of a semiconductor laser device
	MATSUMOTO, MITSUHIRO; SASAKI, KAZUAKI; KONDO, MASAKI
	1992-02-05
著作权人	SHARP KABUSHIKI KAISHA
专利号	EP0469900A2
国家	欧洲专利局
文献子类	发明申请
其他题名	A method for the production of a semiconductor laser device
英文摘要	There is provided a method for the production of a semiconductor laser device which emits laser light from a facet (307). The method includes the steps of: growing a multi-layered structure containing an active layer (304) for laser oscillation on a semiconductor substrate (301) to form a wafer; etching the multi-layered structure to form a striped groove (320) perpendicular to the direction of an optical waveguide, resulting in a pair of resonator facets (307); bringing the facets (307) into contact with a sulfur-containing solution (308); subjecting the facets (307) to heat treatment; growing a semiconductor layer (309) on the surface of the facets (307), which layer (309) has a band gap greater than that of the active layer (304); and cleaving the wafer along the striped groove (320) to obtain a semiconductor laser device.
公开日期	1992-02-05
申请日期	1991-08-01
状态	失效
内容类型	专利
源URL	[http://ir.opt.ac.cn/handle/181661/64420]
专题	半导体激光器专利数据库
作者单位	SHARP KABUSHIKI KAISHA
推荐引用方式 GB/T 7714	MATSUMOTO, MITSUHIRO,SASAKI, KAZUAKI,KONDO, MASAKI. A method for the production of a semiconductor laser device. EP0469900A2. 1992-02-05.

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