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	Epitaxial crystal growth
	IMAMOTO HIROSHI
	1989-10-20
著作权人	OMRON TATEISI ELECTRON CO
专利号	JP1989264217A
国家	日本
文献子类	发明申请
其他题名	Epitaxial crystal growth
英文摘要	PURPOSE:To obtain a crystal whose flatness is excellent and whose quality is high by using a molecular beam epitaxial growth method and by supplying a group III element at a definite cycle while a group V element is being supplied. CONSTITUTION:A molecular beam epitaxial growth method is used in order to grow AlxGa1-xAs on a GaAs substrate. While a group V element (As) is being supplied continuously, the intermittent (ON/OFF) supply of a group III element (Ga, Al) is repeated. It is preferable that a supply amount of the group V element is smaller than a supply amount of the group III element while the group III element is being supplied. In addition, it is preferable that one evaporation duration (ON duration) of the group III element is to be about the duration during which an evaporated layer of one molecule layer or lower can be formed.
公开日期	1989-10-20
申请日期	1988-04-15
状态	失效
内容类型	专利
源URL	[http://ir.opt.ac.cn/handle/181661/64376]
专题	半导体激光器专利数据库
作者单位	OMRON TATEISI ELECTRON CO
推荐引用方式 GB/T 7714	IMAMOTO HIROSHI. Epitaxial crystal growth. JP1989264217A. 1989-10-20.

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