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	Heterostructure, injector laser, semiconductor amplifying element and a semiconductor optical amplifier a final stage
	SHVEYKIN, VASILY IVANOVICH
	2009-06-11
著作权人	GENERAL NANO OPTICS LIMITED
专利号	US20090147812A1
国家	美国
文献子类	发明申请
其他题名	Heterostructure, injector laser, semiconductor amplifying element and a semiconductor optical amplifier a final stage
英文摘要	The heterostructures are used for creation of semiconductor injection emission sources: injection lasers, semiconductor amplifying elements, semiconductor optical amplifiers that are used in fiber optic communication and data transmission systems, in optical superhigh-speed computing and switching systems, in development of medical equipment, laser industrial equipment, frequency-doubled lasers, and for pumping solid-state and fiber lasers and amplifiers. The heterostructure, the injection laser, the semiconductor amplifying element, and the semiconductor optical amplifier are proposed, the essential distinction of which consists in modernization of the active region and the leak-in region of the heterostructure, combined choice of location, compositions, refractive indices and thicknesses of the heterostructure layers providing the efficient functioning of the injection lasers, the semiconductor amplifying elements and the semiconductor optical amplifiers in the transient region of formation of controllable emission leak from the active layer.
公开日期	2009-06-11
申请日期	2005-11-15
状态	失效
内容类型	专利
源URL	[http://ir.opt.ac.cn/handle/181661/64258]
专题	半导体激光器专利数据库
作者单位	GENERAL NANO OPTICS LIMITED
推荐引用方式 GB/T 7714	SHVEYKIN, VASILY IVANOVICH. Heterostructure, injector laser, semiconductor amplifying element and a semiconductor optical amplifier a final stage. US20090147812A1. 2009-06-11.

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