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	HALFGELEIDERINRICHTING.
	-
	1987-08-03
著作权人	WESTERN ELECTRIC COMPANY, INCORPORATED
专利号	NL182110B
国家	荷兰
文献子类	发明申请
其他题名	HALFGELEIDERINRICHTING.
英文摘要	Described is a procedure for virtually eliminating disclocations in multilayer structures of materials having a crystallographic zinc-blend structure, in particular quaternary layers of AlyGa1-yAs1-zPz grown on AlxGa1-xAs substrates (y > x >/= 0). By carefully controlling the quaternary layer thickness and the lattice parameter mismatch at the growth temperature, it is possible to change the direction of substrate dislocations as they enter the substrate/layer interface. The length of the dislocation in the interfacial plane can be extended so that it is "infinitely" long, i.e., it reaches the edge of the wafer. As a result, the epitaxial quaternary layer and all layers subsequently grown thereon will be virtually dislocation free, provided that the thickness, stress and uniformity of the layers are such that no surface dislocation souces are activated. Also described are double heterostructure junction lasers with reduced values of both stress and dislocations.
公开日期	1987-08-03
申请日期	1974-11-11
状态	失效
内容类型	专利
源URL	[http://ir.opt.ac.cn/handle/181661/64149]
专题	半导体激光器专利数据库
作者单位	WESTERN ELECTRIC COMPANY, INCORPORATED
推荐引用方式 GB/T 7714	-. HALFGELEIDERINRICHTING.. NL182110B. 1987-08-03.

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