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	Buried structured semiconductor laser and manufacture thereof
	ITAYA YOSHIO; MOTOSUGI TSUNEJI
	1985-12-12
著作权人	NIPPON DENSHIN DENWA KOSHA
专利号	JP1985251686A
国家	日本
文献子类	发明申请
其他题名	Buried structured semiconductor laser and manufacture thereof
英文摘要	PURPOSE:To manufacture a buried laser having narrow active-layer width by a method wherein a mesa having an active layer having width narrower than a clad layer is shaped under the thin clad layer, the clad layer is melted, the active layer is buried, both sides of the mesa is buried by a current blocking layer and a current confinement layer and a layer is grown so as to cover the whole. CONSTITUTION:An N type InP buffer layer 1, an undoped GaInAsP active layer 2 and a P type InP clad layer 3 are grown onto an N type InP substrate through a liquid-phase epitaxial method. An silicon nitride film is attached onto a grown surface, and the stripes 4 of the silicon nitride film are formed in the 110 direction. Sections up to a section under the active layer 2 are etched to shape a mesa region. The silicon nitride film is removed, and the active layer 2 is buried through a substance transport method. A P type InP current blocking layer 4 and an N type InP current confinement layer 5 are formed. A P type InP clad layer 6 and a P type GaInAsP cap layer 7 are grown. The substrate 1 side is ground, and an electrode 8 and an electrode 9 are shaped.
公开日期	1985-12-12
申请日期	1984-05-28
状态	失效
内容类型	专利
源URL	[http://ir.opt.ac.cn/handle/181661/64018]
专题	半导体激光器专利数据库
作者单位	NIPPON DENSHIN DENWA KOSHA
推荐引用方式 GB/T 7714	ITAYA YOSHIO,MOTOSUGI TSUNEJI. Buried structured semiconductor laser and manufacture thereof. JP1985251686A. 1985-12-12.

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