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	Phase synchronizing semiconductor laser array
	MATOBA AKIHIRO; HORIKAWA HIDEAKI; OSHIBA SAEKO; WADA HIROSHI
	1987-11-25
著作权人	OKI ELECTRIC IND CO LTD
专利号	JP1987271484A
国家	日本
文献子类	发明申请
其他题名	Phase synchronizing semiconductor laser array
英文摘要	PURPOSE:To generate phase-locked laser beams easily by laminating a plurality of double hetero-junctions onto a stepped substrate. CONSTITUTION:N-type InP clad layers 12 and N-type InGaAsP active layers 13 are laminated alternately onto a semi-insulating InP substrate 11 with a stepped section 11a in the same extent as the clad layers 12, thus forming a laminate 13a with a plurality of double hetero-junctions. One part of the laminate 13a is changed into a P-type region 14 through diffusion so that P-N junction surfaces are shaped, crossing the stepped sections 11a. When a forward bias is applied between electrodes 15, 16 each formed onto the P-type region and an N-type region, currents injected concentrate and flow to P-N junctions in the stripes 19 of a plurality of lasers. One part of laser beams are propagated rectilinearly at the stepped sections of the active layers 13 and penetrates to adjacent stripes, and strong interaction is generated among each stripe. Accordingly, phase synchronizing laser beams are generated among the whole stripes.
公开日期	1987-11-25
申请日期	1986-05-20
状态	失效
内容类型	专利
源URL	[http://ir.opt.ac.cn/handle/181661/63932]
专题	半导体激光器专利数据库
作者单位	OKI ELECTRIC IND CO LTD
推荐引用方式 GB/T 7714	MATOBA AKIHIRO,HORIKAWA HIDEAKI,OSHIBA SAEKO,et al. Phase synchronizing semiconductor laser array. JP1987271484A. 1987-11-25.

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