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	Method for brazing semiconductor laser device
	KUNIHARA KENJI
	1988-06-23
著作权人	FUJI ELECTRIC CO LTD
专利号	JP1988151093A
国家	日本
文献子类	发明申请
其他题名	Method for brazing semiconductor laser device
英文摘要	PURPOSE:To prevent the P-N junction of a semiconductor laser chip from short- circuiting due to scattering solder and to improve the manufacturing yield of the laser by brazing the chip to a heat sink in a vacuum atmosphere. CONSTITUTION:A heat sink 4 and a semiconductor laser chip 1 are set on a heater 17 in a vessel 10, a load is applied to close a cover 12. After a valve 14 is opened to supply nitrogen gas into the vessel 10 to fill it, the valve 14 is closed. Then, a vacuum pump 16 is operated to exhaust the nitrogen gas in the vessel 10, and the vessel 10 is then evacuated to vacuum. Then, the heater 17 is energized to raise temperature slightly higher than the melting point of solder 5 to melt it. After a predetermined holding time for alloying it to the electrodes of the chip 1 is elapsed, the heater 17 and a vacuum pump 16 are stopped, and the valve 14 is immediately opened to again introduce the nitrogen gas into the vessel 10. Since the brazing operations are all conducted in the vessel while evacuating the vessel to vacuum, no gas exists on the butting surfaces of the solder on the chip and the heat sink, thereby eliminating a defect due to the short-circuit of the P-N junction.
公开日期	1988-06-23
申请日期	1986-12-16
状态	失效
内容类型	专利
源URL	[http://ir.opt.ac.cn/handle/181661/63060]
专题	半导体激光器专利数据库
作者单位	FUJI ELECTRIC CO LTD
推荐引用方式 GB/T 7714	KUNIHARA KENJI. Method for brazing semiconductor laser device. JP1988151093A. 1988-06-23.

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