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	Cleavage of semiconductor substrate
	ISHIGURO NAGATAKA; FURUIKE SUSUMU
	1987-12-23
著作权人	MATSUSHITA ELECTRIC IND CO LTD
专利号	JP1987296579A
国家	日本
文献子类	发明申请
其他题名	Cleavage of semiconductor substrate
英文摘要	PURPOSE:To form an excellent cleavage plane extremely easily with superior reproducibility by forming an edge flaw at the position of cleavage of the periph eral section of a semiconductor substrate, bonding the semiconductor substrate with a sheet having excellent stretching properties and stretching the sheet. CONSTITUTION:A substrate 1 is fixed onto a stage precisely moved by a stepping motor, etc., and the intervals of edge flaws 6 by a diamond cutter can be conformed to a target value set approximately without errors. The substrate 1 is stuck to a vinyl chloride group sheet 2 by pressure sensitive adhesives 3, the upper section of the substrate 1 is pressed down by a polyester group sheet 4, tensile force is applied mechanically in the direction of the arrow, and the tensile direction is directed in the direction rectangular to the direction of cleavage. When the semiconductor substrate 1 is struck slowly, conformed to the edge flaws 6 by a vertically movable hammer 5 for striking under the state, the substrate 1 is cloven accurately at the positions of the edge flaws 6.
公开日期	1987-12-23
申请日期	1986-06-17
状态	失效
内容类型	专利
源URL	[http://ir.opt.ac.cn/handle/181661/63031]
专题	半导体激光器专利数据库
作者单位	MATSUSHITA ELECTRIC IND CO LTD
推荐引用方式 GB/T 7714	ISHIGURO NAGATAKA,FURUIKE SUSUMU. Cleavage of semiconductor substrate. JP1987296579A. 1987-12-23.

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