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	High output semiconductor laser element
	NOGUCHI ETSUO; NAKANO YOSHINORI; SUZUKI YOSHIO; TAKAHEI KENICHIROU; NAGAI HARUO
	1983-05-21
著作权人	NIPPON DENSHIN DENWA KOSHA
专利号	JP1983085587A
国家	日本
文献子类	发明申请
其他题名	High output semiconductor laser element
英文摘要	PURPOSE:To obtain a preferable high output semiconductor laser element which can prevent current leakage by increasing the growing thickness of a p type crystalline layer for narrowing a current larger than the same degree as the diffusing distance of free electrons implanted to the layer. CONSTITUTION:Layers 11, 12, 13 are sequentially formed as crystalline layers on a substrate crystalline layer 16, a stripe thin film of suitable width is formed, both sides except the lower part of the thin film are removed by chemical etching, and crystalline layers of buried layers 14, 15 to become current narrowing p-n junction are sequentially formed. At this time to prevent current leakage through the buried layer, the thickness of a P type InP crystalline layer 14 is grown in the same degree or larger than the diffusing distance of free electrons, is controlled in thickness to cover the lateral side of GaInAsP 4-element mixed crystal 12, thereby forming an ohmic electrodes 17, 18 and coupling signal oscillator 19.
公开日期	1983-05-21
申请日期	1981-11-17
状态	失效
内容类型	专利
源URL	[http://ir.opt.ac.cn/handle/181661/62838]
专题	半导体激光器专利数据库
作者单位	NIPPON DENSHIN DENWA KOSHA
推荐引用方式 GB/T 7714	NOGUCHI ETSUO,NAKANO YOSHINORI,SUZUKI YOSHIO,et al. High output semiconductor laser element. JP1983085587A. 1983-05-21.

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