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	Lift-off method
	KOYANAGI, TASUKU; TAKEUCHI, HIROKI
	2019-04-18
著作权人	DISCO CORPORATION
专利号	US20190115494A1
国家	美国
文献子类	发明申请
其他题名	Lift-off method
英文摘要	A lift-off method transfers onto a transfer substrate an optical device layer of an optical device wafer in which the optical device layer is formed over a front surface of an epitaxy substrate through a GaN buffer layer. The lift-off method includes: bonding the transfer substrate onto a front surface of the optical device layer through a bonding layer to form a composite substrate; applying a pulsed laser beam of such a wavelength as to be transferred through the epitaxy substrate constituting the composite substrate but to be absorbed in the buffer layer from a back surface side of the epitaxy substrate, to break the buffer layer; and peeling the optical device layer from the epitaxy substrate and transferring the optical device layer onto the transfer substrate, after the buffer layer breaking step is performed.
公开日期	2019-04-18
申请日期	2018-10-12
状态	申请中
内容类型	专利
源URL	[http://ir.opt.ac.cn/handle/181661/57747]
专题	半导体激光器专利数据库
作者单位	DISCO CORPORATION
推荐引用方式 GB/T 7714	KOYANAGI, TASUKU,TAKEUCHI, HIROKI. Lift-off method. US20190115494A1. 2019-04-18.

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