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	Nitride-based electronic device having an oxide cladding layer and method of production
	OHKAWA, KAZUHIRO
	2019-01-17
著作权人	KING ABDULLAH UNIVERSITY OF SCIENCE AND TECHNOLOGY
专利号	WO2019012350A1
国家	世界知识产权组织
文献子类	发明申请
其他题名	Nitride-based electronic device having an oxide cladding layer and method of production
英文摘要	A nitride-based electronic device includes an oxide cladding layer, a nitride cladding layer, and a nitride active region layer arranged between the oxide cladding layer and the nitride cladding layer. First and second metal contacts are electrically coupled to the nitride active region layer. The nitride-based electronic device can be formed in a system in which a non-reactive chamber is arranged between an oxide reaction chamber and a nitride reaction chamber so that oxide and nitride layers can be grown without exposing the device to the environment between growth of the oxide and nitride layers.
公开日期	2019-01-17
申请日期	2018-06-14
状态	未确认
内容类型	专利
源URL	[http://ir.opt.ac.cn/handle/181661/57723]
专题	半导体激光器专利数据库
作者单位	KING ABDULLAH UNIVERSITY OF SCIENCE AND TECHNOLOGY
推荐引用方式 GB/T 7714	OHKAWA, KAZUHIRO. Nitride-based electronic device having an oxide cladding layer and method of production. WO2019012350A1. 2019-01-17.

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