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	Improved thermal contact for semiconductors and related methods
	CRAWFORD, DEVIN EARL; THIAGARAJAN, PRABHU
	2018-11-28
著作权人	LASERTEL INC.
专利号	EP3407440A1
国家	欧洲专利局
文献子类	发明申请
其他题名	Improved thermal contact for semiconductors and related methods
英文摘要	The invention relates to a semiconductor apparatus with improved heat removal and improved heat flow to a heat sink is provided. The semiconductor apparatus includes a p-type semiconductor. An n-p tunnel junction is positioned within an epitaxial structure of the p-type semiconductor. A metal contact layer is connected to the n-p tunnel junction through an alloyed n-type contact interface. The n-p tunnel junction improves heat flow from the semiconductor through an alloyed contact interface formed between the tunnel junction and the metal contact layer which has lower thermal and electrical resistance in comparison to a conventional metallurgically abrupt interface of a p-type contact.
公开日期	2018-11-28
申请日期	2018-05-18
状态	申请中
内容类型	专利
源URL	[http://ir.opt.ac.cn/handle/181661/57718]
专题	半导体激光器专利数据库
作者单位	LASERTEL INC.
推荐引用方式 GB/T 7714	CRAWFORD, DEVIN EARL,THIAGARAJAN, PRABHU. Improved thermal contact for semiconductors and related methods. EP3407440A1. 2018-11-28.

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