| Distributed feedback semiconductor laser element | |
| HITAKA, MASAHIRO; TAKAGI, YUTAKA; SUGIYAMA, TAKAHIRO | |
| 2017-07-13 | |
| 著作权人 | HAMAMATSU PHOTONICS K.K. |
| 专利号 | US20170201069A1 |
| 国家 | 美国 |
| 文献子类 | 发明申请 |
| 其他题名 | Distributed feedback semiconductor laser element |
| 英文摘要 | A DFB laser element includes an active layer 4 having a multiple quantum well structure including a plurality of well layers 4B having different thicknesses, a diffraction grating layer 6 that is optically coupled to the active layer 4, and a pair of cladding layers with the active layer 4 and the diffraction grating layer 6 interposed therebetween. An effective refractive index of the diffraction grating layer 6 is high, and a thickness of the well layer 4B increases as a distance from the diffraction grating layer 6 increases. In this structure, it is possible to reduce dependence on temperature when the DFB semiconductor laser element is miniaturized. |
| 公开日期 | 2017-07-13 |
| 申请日期 | 2017-01-04 |
| 状态 | 授权 |
| 内容类型 | 专利 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/57535]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | HAMAMATSU PHOTONICS K.K. |
| 推荐引用方式 GB/T 7714 | HITAKA, MASAHIRO,TAKAGI, YUTAKA,SUGIYAMA, TAKAHIRO. Distributed feedback semiconductor laser element. US20170201069A1. 2017-07-13. |
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