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	Emitter structures for ultra-small vertical cavity surface emitting lasers (vcsels) and arrays incorporating the same
	BURROUGHS, SCOTT; FISHER, BRENT; CARTER, JAMES
	2018-10-18
著作权人	SENSE PHOTONICS, INC.
专利号	US20180301865A1
国家	美国
文献子类	发明申请
其他题名	Emitter structures for ultra-small vertical cavity surface emitting lasers (vcsels) and arrays incorporating the same
英文摘要	A laser diode includes a semiconductor structure of a lower Bragg reflector layer, an active region, and an upper Bragg reflector layer. The upper Bragg reflector layer includes a lasing aperture having an optical axis oriented perpendicular to a surface of the active region. The active region includes a first material, and the lower Bragg reflector layer includes a second material, where respective lattice structures of the first and second materials are independent of one another. Related laser arrays and methods of fabrication are also discussed.
公开日期	2018-10-18
申请日期	2018-04-12
状态	申请中
内容类型	专利
源URL	[http://ir.opt.ac.cn/handle/181661/57066]
专题	半导体激光器专利数据库
作者单位	SENSE PHOTONICS, INC.
推荐引用方式 GB/T 7714	BURROUGHS, SCOTT,FISHER, BRENT,CARTER, JAMES. Emitter structures for ultra-small vertical cavity surface emitting lasers (vcsels) and arrays incorporating the same. US20180301865A1. 2018-10-18.

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