QQ客服 官方微博 反馈留言

	Integrated Circuit Implementing a VCSEL Array or VCSEL Device
	TAYLOR, GEOFF W.; CAI, JIANHONG
	2018-08-23
著作权人	TAYLOR, GEOFF W.
专利号	US20180241173A1
国家	美国
文献子类	发明申请
其他题名	Integrated Circuit Implementing a VCSEL Array or VCSEL Device
英文摘要	A semiconductor device includes an array of VCSEL devices with an annealed oxygen implant region (annealed at a temperature greater than 800° C.) that surrounds and extends laterally between the VCSEL devices. A common anode and a common cathode can be electrically coupled to the VCSEL devices, with the common anode overlying the annealed oxygen implant region. The annealed oxygen implant region can funnel current into active optical regions of the VCSEL devices and provide current isolation between the VCSEL devices while avoiding an isolation etch between VCSEL devices. In another embodiment, a semiconductor device includes an annealed oxygen implant region surrounding a VCSEL device. The VCSEL device(s) can be formed from a multi-junction layer structure where built-in hole charge Qp for an intermediate p-type layer relative to built-in electron charge Qn for a bottom n-type layer is configured for diode-like current-voltage characteristics of the VCSEL device(s).
公开日期	2018-08-23
申请日期	2017-02-22
状态	授权
内容类型	专利
源URL	[http://ir.opt.ac.cn/handle/181661/56939]
专题	半导体激光器专利数据库
作者单位	TAYLOR, GEOFF W.
推荐引用方式 GB/T 7714	TAYLOR, GEOFF W.,CAI, JIANHONG. Integrated Circuit Implementing a VCSEL Array or VCSEL Device. US20180241173A1. 2018-08-23.

个性服务

查看访问统计

相关权益政策

暂无数据

收藏/分享

除非特别说明，本系统中所有内容都受版权保护，并保留所有权利。