QQ客服 官方微博 反馈留言

	Aluminum nitride-based semiconductor deep ultraviolet light-emitting device
	YAMAMOTO, SHUHICHIROH; UETA, YOSHIHIRO
	2018-03-22
著作权人	SHARP KABUSHIKI KAISHA
专利号	US20180083173A1
国家	美国
文献子类	发明申请
其他题名	Aluminum nitride-based semiconductor deep ultraviolet light-emitting device
英文摘要	A vertically structured, aluminum nitride-based semiconductor deep ultraviolet light-emitting device is provided that exhibits a high light emission efficiency and an improved yield. The aluminum nitride-based semiconductor deep ultraviolet light-emitting device includes: a conductive support substrate; a porous metal film having a conductive macroporous structure with a pore rate of from 10% to 50% inclusive; and an aluminum nitride-based semiconductor layer structural body with a light-emitting layer, the conductive support substrate and the aluminum nitride-based semiconductor layer structural body being bonded with the porous metal film interposed therebetween for electrical connection, wherein the aluminum nitride-based semiconductor deep ultraviolet light-emitting device has an emission peak wavelength of from 220 nm to 300 nm inclusive.
公开日期	2018-03-22
申请日期	2017-09-21
状态	授权
内容类型	专利
源URL	[http://ir.opt.ac.cn/handle/181661/54820]
专题	半导体激光器专利数据库
作者单位	SHARP KABUSHIKI KAISHA
推荐引用方式 GB/T 7714	YAMAMOTO, SHUHICHIROH,UETA, YOSHIHIRO. Aluminum nitride-based semiconductor deep ultraviolet light-emitting device. US20180083173A1. 2018-03-22.

个性服务

查看访问统计

相关权益政策

暂无数据

收藏/分享

除非特别说明，本系统中所有内容都受版权保护，并保留所有权利。