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	Method of making a gallium nitride device
	BEDELL, STEPHEN W.; FOGEL, KEITH E.; LAURO, PAUL A.; SADANA, DEVENDRA K.
	2017-10-12
著作权人	INTERNATIONAL BUSINESS MACHINES CORPORATION
专利号	US20170294517A1
国家	美国
文献子类	发明申请
其他题名	Method of making a gallium nitride device
英文摘要	A method of making a GaN device includes: forming a GaN substrate; forming a plurality of spaced-apart first metal contacts directly on the GaN substrate; forming a layer of insulating GaN on the exposed portions of the upper surface; forming a stressor layer on the contacts and the layer of insulating GaN; forming a handle substrate on the first surface of the stressor layer; spalling the GaN substrate that is located beneath the stressor layer to separate a layer of GaN and removing the handle substrate; bonding the stressor layer to a thermally conductive substrate; forming a plurality of vertical channels through the GaN to define a plurality of device structures; removing the exposed portions of the layer of insulating GaN to electrically isolate the device structures; forming an ohmic contact layer on the second surface; and forming second metal contacts on the ohmic contact layer.
公开日期	2017-10-12
申请日期	2017-06-22
状态	授权
内容类型	专利
源URL	[http://ir.opt.ac.cn/handle/181661/54795]
专题	半导体激光器专利数据库
作者单位	INTERNATIONAL BUSINESS MACHINES CORPORATION
推荐引用方式 GB/T 7714	BEDELL, STEPHEN W.,FOGEL, KEITH E.,LAURO, PAUL A.,et al. Method of making a gallium nitride device. US20170294517A1. 2017-10-12.

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