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	Template for growing group iii-nitride semiconductor layer, group iii-nitride semiconductor light emitting device, and manufacturing method therefor
	AN, SANG JEONG
	2019-07-25
著作权人	AN, SANG JEONG
专利号	US20190229230A1
国家	美国
文献子类	发明申请
其他题名	Template for growing group iii-nitride semiconductor layer, group iii-nitride semiconductor light emitting device, and manufacturing method therefor
英文摘要	A template for growing Group III-nitride semiconductor layers, a Group III-nitride semiconductor light emitting device and methods of manufacturing the same are provided. The template for growing Group III-nitride semiconductor layers includes a growth substrate having a first plane, a second plane opposite to the first plane and a groove extending inwards the growth substrate from the first plane, an insert for heat dissipation placed and secured in the groove, and a nucleation layer formed on a partially removed portion of the first plane.
公开日期	2019-07-25
申请日期	2017-04-28
状态	申请中
内容类型	专利
源URL	[http://ir.opt.ac.cn/handle/181661/54786]
专题	半导体激光器专利数据库
作者单位	AN, SANG JEONG
推荐引用方式 GB/T 7714	AN, SANG JEONG. Template for growing group iii-nitride semiconductor layer, group iii-nitride semiconductor light emitting device, and manufacturing method therefor. US20190229230A1. 2019-07-25.

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