| Multilayer structure containing a crystal matching layer for increased semiconductor device performance | |
| MACHUCA, FRANCISCO; WEISS, ROBERT | |
| 2016-12-29 | |
| 著作权人 | TIVRA CORPORATION |
| 专利号 | US20160380154A1 |
| 国家 | 美国 |
| 文献子类 | 发明申请 |
| 其他题名 | Multilayer structure containing a crystal matching layer for increased semiconductor device performance |
| 英文摘要 | A multilayer structure comprising a crystal matching layer deposited on a substrate. The crystal matching layer is capable of being used as an ohmic contact, thermal heat sink, and reflective layer. The unique properties of the crystal matching layer allows for the reduction of size of semiconductor devices, a reduction in the fabrication time of semiconductor devices, high current capabilities, high voltage standoff capabilities, and other advantages. |
| 公开日期 | 2016-12-29 |
| 申请日期 | 2016-06-27 |
| 状态 | 失效 |
| 内容类型 | 专利 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/54708]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | TIVRA CORPORATION |
| 推荐引用方式 GB/T 7714 | MACHUCA, FRANCISCO,WEISS, ROBERT. Multilayer structure containing a crystal matching layer for increased semiconductor device performance. US20160380154A1. 2016-12-29. |
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