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	Semiconductor light emitting device and fabrication method of the semiconductor light emitting device
	TAKAO, MASAKAZU; SENDA, KAZUHIKO
	2016-06-23
著作权人	ROHM CO., LTD.
专利号	US20160181478A1
国家	美国
文献子类	发明申请
其他题名	Semiconductor light emitting device and fabrication method of the semiconductor light emitting device
英文摘要	A semiconductor light emitting device which can control of current density and can optimize current density and in which a rise in luminosity is possible, and a fabrication method of the semiconductor light emitting device are provided. The semiconductor light emitting device including: a semiconductor substrate structure including a semiconductor substrate, a first metal layer placed on a first surface of the semiconductor substrate, and a second metal layer placed on a second surface of the semiconductor substrate; and a light emitting diode structure including a third metal layer placed on the semiconductor substrate structure, a current control layer placed on the third metal layer and composed of a transparent insulating film and a current control electrode, an epitaxial growth layer placed on the current control layer, and a surface electrode placed on the epitaxial growth layer, wherein the semiconductor substrate structure and the light emitting diode structure are bonded by using the first metal layer and the third metal layer.
公开日期	2016-06-23
申请日期	2016-02-26
状态	申请中
内容类型	专利
源URL	[http://ir.opt.ac.cn/handle/181661/54666]
专题	半导体激光器专利数据库
作者单位	ROHM CO., LTD.
推荐引用方式 GB/T 7714	TAKAO, MASAKAZU,SENDA, KAZUHIKO. Semiconductor light emitting device and fabrication method of the semiconductor light emitting device. US20160181478A1. 2016-06-23.

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