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	Gallium nitride wafer substrate for solid state lighting devices, and associated systems and methods
	LOCHTEFELD, ANTHONY; MARCHAND, HUGUES
	2015-08-06
著作权人	QROMIS, INC.
专利号	US20150221832A1
国家	美国
文献子类	发明申请
其他题名	Gallium nitride wafer substrate for solid state lighting devices, and associated systems and methods
英文摘要	Gallium nitride wafer substrate for solid state lighting devices, and associated systems and methods. A method for making an SSL device substrate in accordance with one embodiment of the disclosure includes forming multiple crystals carried by a support member, with the crystals having an orientation selected to facilitate formation of gallium nitride. The method can further include forming a volume of gallium nitride carried by the crystals, with the selected orientation of the crystals at least partially controlling a crystal orientation of the gallium nitride, and without bonding the gallium nitride, as a unit, to the support member. In other embodiments, the number of crystals can be increased by a process that includes annealing a region in which the crystals are present, etching the region to remove crystals having an orientation other than the selected orientation, and/or growing the crystals having the selected orientation.
公开日期	2015-08-06
申请日期	2015-04-17
状态	授权
内容类型	专利
源URL	[http://ir.opt.ac.cn/handle/181661/54576]
专题	半导体激光器专利数据库
作者单位	QROMIS, INC.
推荐引用方式 GB/T 7714	LOCHTEFELD, ANTHONY,MARCHAND, HUGUES. Gallium nitride wafer substrate for solid state lighting devices, and associated systems and methods. US20150221832A1. 2015-08-06.

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