Method of manufacturing an encapsulated semiconductor device and the encapsulated semiconductor device
JO, GUNN; HYUN, DAESUP; STEINBRECHER, KRISTEN
2013-11-21
著作权人DOW CORNING CORPORATION
专利号WO2013173074A1
国家世界知识产权组织
文献子类发明申请
其他题名Method of manufacturing an encapsulated semiconductor device and the encapsulated semiconductor device
英文摘要A method of manufacturing an encapsulated semiconductor device comprising a semiconductor device encapsulated on at least one major surface with a cured silicon body comprising a cured silicone adhesive composition to give the encapsulated semiconductor device; wherein the cured silicone adhesive composition has a storage modulus at 25° C. of from 0.1 GPa to 10 GPa and has a glass transition temperature of from 0° C. to 80° C.
公开日期2013-11-21
申请日期2013-05-02
状态未确认
内容类型专利
源URL[http://ir.opt.ac.cn/handle/181661/54429]  
专题半导体激光器专利数据库
作者单位DOW CORNING CORPORATION
推荐引用方式
GB/T 7714
JO, GUNN,HYUN, DAESUP,STEINBRECHER, KRISTEN. Method of manufacturing an encapsulated semiconductor device and the encapsulated semiconductor device. WO2013173074A1. 2013-11-21.
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