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	High speed light emitting semiconductor methods and devices
	WALTER, GABRIEL; FENG, MILTON; HOLONYAK, JR., NICK; THEN, HAN WUI; WU, CHAO-HSIN
	2012-10-04
著作权人	WALTER GABRIEL
专利号	US20120249009A1
国家	美国
文献子类	发明申请
其他题名	High speed light emitting semiconductor methods and devices
英文摘要	A method including: providing a transistor structure that includes a base region of first semiconductor type between semiconductor emitter and collector regions of second semiconductor type; providing, in the base region, at least one region exhibiting quantum size effects; providing emitter, base, and collector electrodes respectively coupled with emitter, base, and collector regions; applying electrical signals, including a high frequency electrical signal component, with respect to the emitter, base, and collector electrodes to produce output spontaneous light emission from the base region, aided by the quantum size region, the output spontaneous light emission including a high frequency optical signal component representative of the high frequency electrical signal component; providing an optical cavity for the light emission in the region between the base and emitter electrodes; and scaling the lateral dimensions of the optical cavity to control the speed of light emission response to the high frequency electrical signal component.
公开日期	2012-10-04
申请日期	2012-05-03
状态	失效
内容类型	专利
源URL	[http://ir.opt.ac.cn/handle/181661/54323]
专题	半导体激光器专利数据库
作者单位	WALTER GABRIEL
推荐引用方式 GB/T 7714	WALTER, GABRIEL,FENG, MILTON,HOLONYAK, JR., NICK,et al. High speed light emitting semiconductor methods and devices. US20120249009A1. 2012-10-04.

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