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	Stress regulated semiconductor devices and associated methods
	SUNG, CHIEN-MIN; KAN, MING-CHI; HU, SHAO CHUNG
	2013-03-14
著作权人	RITEDIA CORPORATION
专利号	US20130062627A1
国家	美国
文献子类	发明申请
其他题名	Stress regulated semiconductor devices and associated methods
英文摘要	Stress regulated semiconductor devices and associated methods are provided. In one aspect, for example, a stress regulated semiconductor device can include a semiconductor layer, a stress regulating interface layer including a carbon layer formed on the semiconductor layer, and a heat spreader coupled to the carbon layer opposite the semiconductor layer. The stress regulating interface layer is operable to reduce the coefficient of thermal expansion difference between the semiconductor layer and the heat spreader to less than or equal to about 10 ppm/° C.
公开日期	2013-03-14
申请日期	2012-03-05
状态	失效
内容类型	专利
源URL	[http://ir.opt.ac.cn/handle/181661/54306]
专题	半导体激光器专利数据库
作者单位	RITEDIA CORPORATION
推荐引用方式 GB/T 7714	SUNG, CHIEN-MIN,KAN, MING-CHI,HU, SHAO CHUNG. Stress regulated semiconductor devices and associated methods. US20130062627A1. 2013-03-14.

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