QQ客服 官方微博 反馈留言

	Fabrication of semiconductor light emitting device
	SANADA TATSUYUKI; FURUYA AKIRA
	1992-10-16
著作权人	FUJITSU LTD
专利号	JP1992291979A
国家	日本
文献子类	发明申请
其他题名	Fabrication of semiconductor light emitting device
英文摘要	PURPOSE:To improve the characteristics of a semiconductor laser in the information of a semiconductor layer electrode structure by preventing an active laser from a cleavage part upon a high-melting-point contact metal layer from being damaged to prevent the deterioration of device characteristics and make uniform an injected current for improvement of a heat dissipation characteristic. CONSTITUTION:The surface of a semiconductor laser body is covered with an SiO2 film 16, and a stripe window 17 is opened. A high melting point contact metal layer is formed by covering with a Ti film 18 and a Pt film 19. The surface of the metal layer is covered with an Au film. Au plating 21 is formed through selective plating. An Au film 20 of a predetermined width part (in the vicinity of a cleavage portion) on the stripe window is left behind, and the Au film other than the foregoing portion is removed. The high-melting-point contact metal layer (Pt film 19, Ti film) is etched and removed by reactive ion etching (IBE) using the Au plating 21 as a mask.
公开日期	1992-10-16
申请日期	1991-03-20
状态	失效
内容类型	专利
源URL	[http://ir.opt.ac.cn/handle/181661/50687]
专题	半导体激光器专利数据库
作者单位	FUJITSU LTD
推荐引用方式 GB/T 7714	SANADA TATSUYUKI,FURUYA AKIRA. Fabrication of semiconductor light emitting device. JP1992291979A. 1992-10-16.

个性服务

查看访问统计

相关权益政策

暂无数据

收藏/分享

除非特别说明，本系统中所有内容都受版权保护，并保留所有权利。