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	Formation of electrode on iii-v compound semiconductor p layer
	UCHIDA AKIRA; KOBAYASHI SHINJI; YAGIHARA TAKESHI; KAMATA HIROMI; OKA SADAJI; MIURA AKIRA
	1992-01-14
著作权人	横河電機株式会社
专利号	JP1992010571A
国家	日本
文献子类	发明申请
其他题名	Formation of electrode on iii-v compound semiconductor p layer
英文摘要	PURPOSE:To enable an electrode to be ohmically bonded well to the P layer of a III-V compound semiconductor by a method wherein the electrode is formed of material formed in such a process that ZnSi, WSi, and Au are successively laminated and annealed. CONSTITUTION:An InGaAs P layer doped with a P-type dopant such as Be or the like is used, ZnSi whose volume mixing ratio of Zn to Si is nearly 1:1, WSi whose volume mixing ratio of W to Si is 1:2, and Au are successively formed on the P layer as thick as 50Angstrom or so, 100-3000Angstrom , and 1000Angstrom or above through sputtering. Then, the semiconductor device concerned is put in an oven and annealed at a temperature of 300 deg.C for 30 minutes. In result, an alloy is induced in a region of the surface of the P layer as thick as 100Angstrom due to the diffusion of Zn, so that a good ohmic electrode excellent in adhesion and free of spiky diffusion can be obtained.
公开日期	1992-01-14
申请日期	1990-04-27
状态	失效
内容类型	专利
源URL	[http://ir.opt.ac.cn/handle/181661/50617]
专题	半导体激光器专利数据库
作者单位	横河電機株式会社
推荐引用方式 GB/T 7714	UCHIDA AKIRA,KOBAYASHI SHINJI,YAGIHARA TAKESHI,et al. Formation of electrode on iii-v compound semiconductor p layer. JP1992010571A. 1992-01-14.

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