QQ客服 官方微博 反馈留言

	Vapor growth device
	KASAI SHUSUKE; YAMAMOTO OSAMU; KONDO MASAKI; SASAKI KAZUAKI; MATSUMOTO AKIHIRO
	1991-12-16
著作权人	シャープ株式会社
专利号	JP1991285327A
国家	日本
文献子类	发明申请
其他题名	Vapor growth device
英文摘要	PURPOSE:To make it possible to perform the cleavage of a semiconductor crystal easily and without marring a substrate by a method wherein a vapor growth device is provided with a means, which applies an ultrasonic vibration to the substrate formed with at least one layer consisting of the semiconductor crystal and performs the cleavage of the semiconductor crystal. CONSTITUTION:A substrate 11 with protrusion parts 21 formed therein is fixed on a susceptor 35, is introduced in the interior of a substrate treatment chamber 30 and is placed on an ultrasonic vibration applying stage 37. A sample introducing port 33 is closed, a gate valve 32 is opened, the interiors of the chamber 30 and a reactor 31 are exhausted and when an ultrasonic vibration is applied to the substrate 11 from the stage 37 via the susceptor 35, the protrusion parts 21 in the substrate 11 are immediately cleaved at the parts of coupling parts 22 to form a resonator and a cleavage surface 23 becomes a resonator end surface. Then, the susceptor 35 is moved over a receiving pan 38, a support bar 36 is rotated and the remaining protrusion parts 21 are made to fall in the pan 38 and are removed. Moreover, a tilted forbidden band width layer, an end surface reflection film and the like can be formed on the cleavage surface within the same device subsequently to the removal of the protrusion parts.
公开日期	1991-12-16
申请日期	1990-04-02
状态	失效
内容类型	专利
源URL	[http://ir.opt.ac.cn/handle/181661/50608]
专题	半导体激光器专利数据库
作者单位	シャープ株式会社
推荐引用方式 GB/T 7714	KASAI SHUSUKE,YAMAMOTO OSAMU,KONDO MASAKI,et al. Vapor growth device. JP1991285327A. 1991-12-16.

个性服务

查看访问统计

相关权益政策

暂无数据

收藏/分享

除非特别说明，本系统中所有内容都受版权保护，并保留所有权利。