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	Compound semiconductor light emitting device
	HORIE, HIDEYOSHI; OHTA, HIROTAKA; FUJIMORI, TOSHINARI
	2004-01-13
著作权人	MITSUBISHI CHEMICAL CORPORATION
专利号	US6677618
国家	美国
文献子类	授权发明
其他题名	Compound semiconductor light emitting device
英文摘要	Disclosed compound semiconductor light emitting devices have a substrate, a compound semiconductor layer, formed on the substrate, containing a first conductive type clad layer, an active layer, and a second conductive type clad layer, and a resonator structure formed of two opposing facets of the compound semiconductor layer, wherein surfaces of the first conductive type clad layer, the active layer, and the second conductive type clad layer forming the facet of the compound semiconductor are covered with a passivation layer, wherein at least one element constituting the facet of the compound semiconductor layer is not coupled to oxygen, and wherein a portion of the passivation layer adjacent to the facet of the compound semiconductor layer contains oxygen as a structural element. The compound semiconductor light emitting devices according to the invention can stably suppress, for a long time, the surface state densities on the facets occurring on extrinsic causes, and are high performance devices with establishing both of a high output and a long lifetime.
公开日期	2004-01-13
申请日期	1999-12-03
状态	失效
内容类型	专利
源URL	[http://ir.opt.ac.cn/handle/181661/47804]
专题	半导体激光器专利数据库
作者单位	MITSUBISHI CHEMICAL CORPORATION
推荐引用方式 GB/T 7714	HORIE, HIDEYOSHI,OHTA, HIROTAKA,FUJIMORI, TOSHINARI. Compound semiconductor light emitting device. US6677618. 2004-01-13.

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