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	Monolithic PNPN injection laser optical repeater
	GOVER, AVRAHAM; SAMID, ILAN; LEE, CHIEN-PING
	1977-12-27
著作权人	CALIFORNIA INSTITUTE OF TECHNOLOGY
专利号	US4065729
国家	美国
文献子类	授权发明
其他题名	Monolithic PNPN injection laser optical repeater
英文摘要	A monolithic PNPN injection laser diode operating as an optical repeater is comprised of a direct band-gap semiconductor material, such as essentially GaAs, epitaxially grown in five layers with the first, third and fifth layers of GaAsAl and the second and fourth layers of GaAs, and all layers suitably doped to effectively form two complementary transistors interconnected for regenerative feedback between them with the second layer forming the base of one transistor and the collector of the other transistor, and the third layer forming the base of the other transistor and the collector of the one transistor. The PNPN laser diode thus produced has a V-I negative resistance characteristic. The second and fourth layers produce coherent laser beams in response to a light pulse received while the laser diode is biased off with its load line below its breakover voltage, thus switching the laser diode on. An externally stored charge is then discharged through the laser diode to produce the coherent laser beams until the discharging current is reduced below a threshold level. The laser diode is then cut off and the charge is restored in preparation for responding to another light pulse.
公开日期	1977-12-27
申请日期	1976-04-16
状态	失效
内容类型	专利
源URL	[http://ir.opt.ac.cn/handle/181661/47767]
专题	半导体激光器专利数据库
作者单位	CALIFORNIA INSTITUTE OF TECHNOLOGY
推荐引用方式 GB/T 7714	GOVER, AVRAHAM,SAMID, ILAN,LEE, CHIEN-PING. Monolithic PNPN injection laser optical repeater. US4065729. 1977-12-27.

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