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	III-V group GaN-based compound semiconductor device
	SON, JOONG-KON; HA, KYOUNG-HO; RYU, HAN-YOUL
	2010-11-02
著作权人	SAMSUNG ELECTRONICS CO., LTD.
专利号	US7826505
国家	美国
文献子类	授权发明
其他题名	III-V group GaN-based compound semiconductor device
英文摘要	A III-V Group GaN-based compound semiconductor device with an improved structure having low current comsumption, high optical output, and a long lifetime is provided. The III-V Group GaN-based compound semiconductor device includes an active layer and a first clad layer and a second clad layer, wherein at least one of the first clad layer and the second clad layer has a superlattice structure formed of a plurality of alternating AlxGa(1-x)N layers (0
公开日期	2010-11-02
申请日期	2006-06-02
状态	授权
内容类型	专利
源URL	[http://ir.opt.ac.cn/handle/181661/47716]
专题	半导体激光器专利数据库
作者单位	SAMSUNG ELECTRONICS CO., LTD.
推荐引用方式 GB/T 7714	SON, JOONG-KON,HA, KYOUNG-HO,RYU, HAN-YOUL. III-V group GaN-based compound semiconductor device. US7826505. 2010-11-02.

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