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	Laser diode and method of fabrication thereof
	NOEL, JEAN-PAUL F.; ADAMS, DAVID M.
	2000-11-21
著作权人	NORTEL NETWORKS CORPORATION
专利号	US6151347
国家	美国
文献子类	授权发明
其他题名	Laser diode and method of fabrication thereof
英文摘要	A semiconductor laser device structure comprising an active region provided by a quantum well of an indirect bandgap material, the quantum well being divided laterally to form an active region comprising a two dimensional array of localized cells. Preferably the quantum well of indirect band gap material is selected from group IV semiconductor materials and comprises a silicon-germanium alloy. A silicon/silicon-germanium alloy multi-quantum well (MQW) structure is described. In a preferred embodiment, a Si/SiGe alloy MQW laser diode comprises a coplanar double grating configuration etched through the MQW structure to provide distributed feedback. The double intersecting grating structure functions to define an array of "cells" or regions of finite dimensions in the quantum well structure which "localize" carriers within the cells thereby enhancing the radiative emission probability. The grating also provides for combined gain-coupled and index-coupled distributed feedback. The diode structure is preferably designed using a suitable Si/SiGe alloy composition and QW layer thicknesses, to provide for lasing at wavelengths compatible with fiber optic communication applications.
公开日期	2000-11-21
申请日期	1998-06-09
状态	失效
内容类型	专利
源URL	[http://ir.opt.ac.cn/handle/181661/47714]
专题	半导体激光器专利数据库
作者单位	NORTEL NETWORKS CORPORATION
推荐引用方式 GB/T 7714	NOEL, JEAN-PAUL F.,ADAMS, DAVID M.. Laser diode and method of fabrication thereof. US6151347. 2000-11-21.

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