| Bandgap isolated light emitter | |
| JOHNSON, RALPH H. | |
| 2000-05-16 | |
| 著作权人 | FINISAR CORPORATION |
| 专利号 | US6064683 |
| 国家 | 美国 |
| 文献子类 | 授权发明 |
| 其他题名 | Bandgap isolated light emitter |
| 英文摘要 | A light emitting device having a first mirror, an active layer, a second mirror, and a beryllium implantation resulting in a peripheral boundary of a waveguide through the first and second mirrors, the active layer and the trapping layer. A P-N junction is situated within the implantation and the guide. The turn on voltage is lower for the junction within the waveguide than that within the implantation, resulting in confinement of current within the guide at a voltage applied to the device that is greater than the lower junction voltage and less than the higher junction voltage. The device also has an electron trapping layer between said first mirror and said active layer, and a conduction layer situated on said second mirror. |
| 公开日期 | 2000-05-16 |
| 申请日期 | 1997-12-12 |
| 状态 | 失效 |
| 内容类型 | 专利 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/47651]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | FINISAR CORPORATION |
| 推荐引用方式 GB/T 7714 | JOHNSON, RALPH H.. Bandgap isolated light emitter. US6064683. 2000-05-16. |
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