| Group III nitride compound semiconductor light-emitting device | |
| SAWAZAKI, KATSUHISA; ASAI, MAKOTO; KANEYAMA, NAOKI | |
| 2005-03-01 | |
| 著作权人 | TOYODA GOSEI CO., LTD. |
| 专利号 | US6861663 |
| 国家 | 美国 |
| 文献子类 | 授权发明 |
| 其他题名 | Group III nitride compound semiconductor light-emitting device |
| 英文摘要 | A buffer layer of aluminum nitride (AlN) about 25 nm thick is provided on a sapphire substrate. An n+ layer of a high carrier density, which is about 4.0 μm thick and which is made of GaN doped with silicon (Si), is formed on the buffer layer. An intermediate layer of non-doped InxGa1−xN (0 |
| 公开日期 | 2005-03-01 |
| 申请日期 | 2000-03-10 |
| 状态 | 授权 |
| 内容类型 | 专利 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/47645]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | TOYODA GOSEI CO., LTD. |
| 推荐引用方式 GB/T 7714 | SAWAZAKI, KATSUHISA,ASAI, MAKOTO,KANEYAMA, NAOKI. Group III nitride compound semiconductor light-emitting device. US6861663. 2005-03-01. |
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