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	Semiconductor laser devices having lateral refractive index tailoring
	ASHBY, CAROL I. H.; HADLEY, G. RONALD; HOHIMER, JOHN P.; OWYOUNG, ADELBERT
	1990-10-23
著作权人	UNITED STATES OF AMERICA, THE, AS REPRESENTED BY THE DEPARTMENT OF ENERGY
专利号	US4965806
国家	美国
文献子类	授权发明
其他题名	Semiconductor laser devices having lateral refractive index tailoring
英文摘要	A broad-area semiconductor laser diode includes an active lasing region interposed between an upper and a lower cladding layer, the laser diode further comprising structure for controllably varying a lateral refractive index profile of the diode to substantially compensate for an effect of junction heating during operation. In embodiments disclosed the controlling structure comprises resistive heating strips or non-radiative linear junctions disposed parallel to the active region. Another embodiment discloses a multi-layered upper cladding region selectively disordered by implanted or diffused dopant impurities. Still another embodiment discloses an upper cladding layer of variable thickness that is convex in shape and symmetrically disposed about a central axis of the active region. The teaching of the invention is also shown to be applicable to arrays of semiconductor laser diodes.
公开日期	1990-10-23
申请日期	1989-06-15
状态	失效
内容类型	专利
源URL	[http://ir.opt.ac.cn/handle/181661/47641]
专题	半导体激光器专利数据库
作者单位	UNITED STATES OF AMERICA, THE, AS REPRESENTED BY THE DEPARTMENT OF ENERGY
推荐引用方式 GB/T 7714	ASHBY, CAROL I. H.,HADLEY, G. RONALD,HOHIMER, JOHN P.,et al. Semiconductor laser devices having lateral refractive index tailoring. US4965806. 1990-10-23.

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