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	High power, high efficiency quantum cascade lasers with reduced electron leakage
	BOTEZ, DAN; SHIN, JAE CHEOL
	2012-12-04
著作权人	WISCONSIN ALUMNI RESEARCH FOUNDATION
专利号	US8325774
国家	美国
文献子类	授权发明
其他题名	High power, high efficiency quantum cascade lasers with reduced electron leakage
英文摘要	Semiconductor structures and laser devices including the semiconductor structures are provided. The semiconductor structures have a quantum cascade laser (QCL) structure including an electron injector, an active region, and an electron extractor. The active region of the semiconductor structures includes a configuration of quantum wells and barriers that virtually suppresses electron leakage, thereby providing laser devices including such structures with superior electro-optical characteristics.
公开日期	2012-12-04
申请日期	2010-08-12
状态	授权
内容类型	专利
源URL	[http://ir.opt.ac.cn/handle/181661/47603]
专题	半导体激光器专利数据库
作者单位	WISCONSIN ALUMNI RESEARCH FOUNDATION
推荐引用方式 GB/T 7714	BOTEZ, DAN,SHIN, JAE CHEOL. High power, high efficiency quantum cascade lasers with reduced electron leakage. US8325774. 2012-12-04.

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