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	Method for producing II-VI compound semiconductor epitaxial layers having low defects
	GAINES, JAMES MATTHEW; PETRUZZELLO, JOHN
	1999-12-14
著作权人	PHILIPS ELECTRONICS NORTH AMERICA CORPORATION
专利号	US6001669
国家	美国
文献子类	授权发明
其他题名	Method for producing II-VI compound semiconductor epitaxial layers having low defects
英文摘要	Epitaxial layers of II-VI semiconductor compounds having low incidence of lattice defects such as stacking faults are produced by first depositing a fraction of a monolayer of the cation species of the compound, followed by depositing a thin layer of the compound by migration enhanced epitaxy (MEE). Growth of the remainder of the layer by MBE results in much lower defects than if the entire layer had been grown by MBE. Layers are useful in devices such as LEDs and injection lasers.
公开日期	1999-12-14
申请日期	1992-07-21
状态	失效
内容类型	专利
源URL	[http://ir.opt.ac.cn/handle/181661/47471]
专题	半导体激光器专利数据库
作者单位	PHILIPS ELECTRONICS NORTH AMERICA CORPORATION
推荐引用方式 GB/T 7714	GAINES, JAMES MATTHEW,PETRUZZELLO, JOHN. Method for producing II-VI compound semiconductor epitaxial layers having low defects. US6001669. 1999-12-14.

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