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	Method for fabricating a semiconductor laser device in which the P-type clad layer and the active layer are grown at different rates
	YOKOTSUKA, TATSUO; TAKAMORI, AKIRA; NAKAJIMA, MASATO; SUZUKI, TOMOKO
	1993-03-02
著作权人	MATSUSHITA ELECTRIC INDUSTRIAL CO., LTD.
专利号	US5190891
国家	美国
文献子类	授权发明
其他题名	Method for fabricating a semiconductor laser device in which the P-type clad layer and the active layer are grown at different rates
英文摘要	A method for fabricating a semiconductor laser device wherein a first clad layer is formed on a GaAs monocrystal substrate of one conductivity type. The first clad layer is made of a compound semiconductor of one conductivity type represented by the formula, (Al.sub.x Ga.sub.1-x).sub.0.5 In.sub.0.5 P, wherein 0.4 .ltoreq.X.ltoreq. Then, an active layer of a compound semiconductor of the formula. (Al.sub.y Ga.sub.1-y).sub.0.5 In.sub.0.5 P, wherein 0.ltoreq.y.ltoreq.0.35 is formed on the first clad layer, on which a second clad layer of a compound semiconductor of the other conductivity type represented by the formula defined with respect to the first clad layer. At least one of the first and second clad layers is epitaxially grown at a rate of not larger than 0.5 .mu.m/hour sufficient to form a monolayer superlattice structure therein and the active layer is epitaxially grown at a rate of not less than 2.0 .mu.m/hour.
公开日期	1993-03-02
申请日期	1991-06-05
状态	失效
内容类型	专利
源URL	[http://ir.opt.ac.cn/handle/181661/47367]
专题	半导体激光器专利数据库
作者单位	MATSUSHITA ELECTRIC INDUSTRIAL CO., LTD.
推荐引用方式 GB/T 7714	YOKOTSUKA, TATSUO,TAKAMORI, AKIRA,NAKAJIMA, MASATO,et al. Method for fabricating a semiconductor laser device in which the P-type clad layer and the active layer are grown at different rates. US5190891. 1993-03-02.

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