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	Enhanced planarity in GaN edge emitting lasers
	BHAT, RAJARAM
	2013-01-15
著作权人	THORLABS QUANTUM ELECTRONICS, INC.
专利号	US8355422
国家	美国
文献子类	授权发明
其他题名	Enhanced planarity in GaN edge emitting lasers
英文摘要	A GaN edge emitting laser is provided comprising a semi-polar GaN substrate, an active region, N-side and P-side waveguiding layers, and N-type and P-type cladding layers. The GaN substrate defines a 20 21 crystal growth plane and a glide plane. The N-side and P-side waveguiding layers comprise a GaInN/GaN or GaInN/GaInN superlattice (SL) waveguiding layers. The SL layers of the N-side and P-side SL waveguiding layers have layer thicknesses between approximately 1 nm and 5 nm that are optimized for waveguide planarity. In another embodiments, planarization is enhanced by ensuring that the N-side and P-side GaN-based waveguiding layers are grown at a growth rate that exceeds approximately 0.09 nm/s, regardless of whether the N-side and P-side GaN-based waveguiding layers are provided as a GaInN/GaN SL, GaInN/GaInN SL or as bulk layers. In further embodiments, planarization is enhanced by selecting optimal SL layer thicknesses and growth rates.
公开日期	2013-01-15
申请日期	2012-06-11
状态	失效
内容类型	专利
源URL	[http://ir.opt.ac.cn/handle/181661/47284]
专题	半导体激光器专利数据库
作者单位	THORLABS QUANTUM ELECTRONICS, INC.
推荐引用方式 GB/T 7714	BHAT, RAJARAM. Enhanced planarity in GaN edge emitting lasers. US8355422. 2013-01-15.

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