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	Semiconductor laser device, semiconductor laser module, rare-earth-element-doped optical fiber amplifier and fiber laser
	OKADA, SATORU; FUJIMOTO, TSUYOSHI; OEDA, YASUO
	2002-11-05
著作权人	MITSUI CHEMICALS INC.
专利号	US6477191
国家	美国
文献子类	授权发明
其他题名	Semiconductor laser device, semiconductor laser module, rare-earth-element-doped optical fiber amplifier and fiber laser
英文摘要	A semiconductor laser device includes: an active layer; upper waveguide layers and a lower waveguide layer sandwiching the active layer therebetween; upper and lower cladding layers sandwiching the active layer and the upper and lower waveguide layers therebetween; and a current-narrowing layer defining a current-injection region for injecting current to the active layer, wherein a diffraction grating having a periodical structure in a resonance cavity direction is buried in any one of the waveguide layers, the diffraction grating being present in at least a part of the current-injection region; and the waveguide layer in which the diffraction grating is buried and the cladding layer adjoining to that waveguide layer forms an interface which is substantially flat in the resonance cavity direction. With the constitution, a waveguide structure which has a diffraction grating offering a higher flexibility in design and manufacture in terms of the coupling efficiency is realized, thereby easily providing a dynamic single-mode semiconductor laser device with higher reproducibility, yield and reliability.
公开日期	2002-11-05
申请日期	2000-03-30
状态	授权
内容类型	专利
源URL	[http://ir.opt.ac.cn/handle/181661/47260]
专题	半导体激光器专利数据库
作者单位	MITSUI CHEMICALS INC.
推荐引用方式 GB/T 7714	OKADA, SATORU,FUJIMOTO, TSUYOSHI,OEDA, YASUO. Semiconductor laser device, semiconductor laser module, rare-earth-element-doped optical fiber amplifier and fiber laser. US6477191. 2002-11-05.

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