QQ客服 官方微博 反馈留言

	Compact, all solid-state, avalanche photodiode emitter-detector pixel with electronically selectable, passive or active detection mode, for large-scale, high resolution, imaging focal plane arrays
	STERN, ALVIN GABRIEL
	2012-11-27
著作权人	STERN ALVIN GABRIEL
专利号	US8320423
国家	美国
文献子类	授权发明
其他题名	Compact, all solid-state, avalanche photodiode emitter-detector pixel with electronically selectable, passive or active detection mode, for large-scale, high resolution, imaging focal plane arrays
英文摘要	An advanced, back-illuminated, silicon avalanche photodiode (APD) design is presented using silicon-on-sapphire with a novel crystalline aluminum nitride (AlN) antireflective layer between the silicon and R-plane sapphire. The substrate supports optical and electrical integration of a high quantum efficiency silicon APD with a gallium nitride (GaN)-VCSEL diode in each pixel to form a novel, compact, emitter-detector pixel for passive and active 2-D and 3-D high resolution, imaging focal plane arrays. Silicon mesa pixels are anisotropically etched with a central inverted mesa frustum cavity. The APD detector is fabricated in the silicon mesa and the GaN-VCSEL diode is grown epitaxially in the center of the mesa. A sapphire microlens below each pixel collimates the VCSEL beam and focuses optical returns into the APD detector. APDs share a common front-side anode, and VCSELs share a common cathode. The APD cathode is electrically connected to the VCSEL diode anode in each emitter-detector pixel.
公开日期	2012-11-27
申请日期	2010-08-24
状态	失效
内容类型	专利
源URL	[http://ir.opt.ac.cn/handle/181661/46426]
专题	半导体激光器专利数据库
作者单位	STERN ALVIN GABRIEL
推荐引用方式 GB/T 7714	STERN, ALVIN GABRIEL. Compact, all solid-state, avalanche photodiode emitter-detector pixel with electronically selectable, passive or active detection mode, for large-scale, high resolution, imaging focal plane arrays. US8320423. 2012-11-27.

个性服务

查看访问统计

相关权益政策

暂无数据

收藏/分享

除非特别说明，本系统中所有内容都受版权保护，并保留所有权利。