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	Laser devices including separate confinement heterostructure
	HEFFERNAN, JONATHAN; DUGGAN, GEOFFREY
	2000-07-04
著作权人	SHARP KABUSHIKI KAISHA
专利号	US6084898
国家	美国
文献子类	授权发明
其他题名	Laser devices including separate confinement heterostructure
英文摘要	A separate confinement heterostructure (SCH) laser device (LD) has: a quantum well active region within an optical guiding region; and, n-type and p-type cladding regions provided on opposite sides of the optical guiding region. An electron-capture layer is provided in the n-side portion of the optical guiding region. The composition of the electron-capture layer is set in such a manner that the minimum energy for X-electrons in the conduction band is lower than that in the surrounding parts of the active region and/or the n-side portion of the optical guiding region. The electron-capture layer is thick enough to bind X-electrons so that, in use, the electron-capture layer promotes the capture of the X-electrons. The electron-capture layer is disposed sufficiently close to the active region to permit transfer ot the captured X-electrons to at least one GAMMA -confined level in the active region.
公开日期	2000-07-04
申请日期	1997-12-16
状态	失效
内容类型	专利
源URL	[http://ir.opt.ac.cn/handle/181661/46296]
专题	半导体激光器专利数据库
作者单位	SHARP KABUSHIKI KAISHA
推荐引用方式 GB/T 7714	HEFFERNAN, JONATHAN,DUGGAN, GEOFFREY. Laser devices including separate confinement heterostructure. US6084898. 2000-07-04.

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