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	Purging: a reliability assurance technique for semiconductor lasers utilizing a purging process
	GORDON, EUGENE I.; HARTMAN, ROBERT L.; NASH, FRANKLIN R.
	1986-03-04
著作权人	BELL TELEPHONE LABORATORES, INCORPORATED A CORP. OF NY
专利号	US4573255
国家	美国
文献子类	授权发明
其他题名	Purging: a reliability assurance technique for semiconductor lasers utilizing a purging process
英文摘要	Prior to packaging, semiconductor lasers are purged by being subjected first to high temperature and high current simultaneously so as to suppress stimulated emission and stress the shunt paths which allow leakage current to flow around the active region. A prudent, but nonessential, second step is to lower the temperature and/or current so that the lasers emit stimulated emission (preferably strongly, near the peak output power), thereby stressing the active region. Lasers subjected to such a purge exhibit stabilized degradation rates in short times (of the order of a few hours) and provide a robust population which meets the performance criteria of long lifetime systems.
公开日期	1986-03-04
申请日期	1984-03-22
状态	失效
内容类型	专利
源URL	[http://ir.opt.ac.cn/handle/181661/46268]
专题	半导体激光器专利数据库
作者单位	BELL TELEPHONE LABORATORES, INCORPORATED A CORP. OF NY
推荐引用方式 GB/T 7714	GORDON, EUGENE I.,HARTMAN, ROBERT L.,NASH, FRANKLIN R.. Purging: a reliability assurance technique for semiconductor lasers utilizing a purging process. US4573255. 1986-03-04.

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