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	III-nitride compound semiconductor light emitting device
	KIM, CHANG-TAE; KIM, KEUK; JEON, SOO-KUN; JANG, PIL-GUK; KIM, JONG-WON
	2009-11-24
著作权人	EPIVALLEY CO., LTD. F/K/A SUNGIL TELECOM CO., LTD.
专利号	US7622742
国家	美国
文献子类	授权发明
其他题名	III-nitride compound semiconductor light emitting device
英文摘要	The present invention relates to a III-nitride semiconductor light-emitting device having high external quantum efficiency, provides a III-nitride compound semiconductor light-emitting device including an active layer generating light by recombination of electrons and holes and containing gallium and nitrogen, an n-type Al(x)ln(y)Ga(1-x-y)N layer epitaxially grown before the active layer is grown, and an n-type electrode electrically contacting with the n-type Al(x)ln(y)Ga(1-x-y)N layer, in which the n-type Al(x)ln(y)Ga(1-x-y)N layer has a surface which is exposed by etching and includes a region for scribing and breaking the device and a region for contact with the n-type electrode, and the surface of the region for scribing and breaking the device is roughened, thereby it is possible to increase external quantum efficiency of the light-emitting device.
公开日期	2009-11-24
申请日期	2004-07-02
状态	失效
内容类型	专利
源URL	[http://ir.opt.ac.cn/handle/181661/46231]
专题	半导体激光器专利数据库
作者单位	EPIVALLEY CO., LTD. F/K/A SUNGIL TELECOM CO., LTD.
推荐引用方式 GB/T 7714	KIM, CHANG-TAE,KIM, KEUK,JEON, SOO-KUN,et al. III-nitride compound semiconductor light emitting device. US7622742. 2009-11-24.

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