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	Strained layer InP/InGaAs quantum well laser
	FOROUHAR, SIAMAK; LARSSON, ANDERS G.; KSENDZOV, ALEXANDER; LANG, ROBERT J.
	1993-10-26
著作权人	CALIFORNIA INSTITUTE OF TECHNOLOGY A CORP. OF CALIFORNIA
专利号	US5257276
国家	美国
文献子类	授权发明
其他题名	Strained layer InP/InGaAs quantum well laser
英文摘要	Strained layer single or multiple quantum well lasers include an InP substrate, a pair of lattice-matched InGaAsP quarternary layers epitaxially grown on the substrate surrounding a pair of lattice matched In0.53Ga0.47As ternary layers surrounding one or more strained active layers of epitaxially grown, lattice-mismatched In0.75Ga0.25As. The level of strain is selected to control the bandgap energy to produce laser output having a wavelength in the range of 6 to 2.5 mu m. The multiple quantum well structure uses between each active layer. Diethyl zinc is used for p-type dopant in an InP cladding layer at a concentration level in the range of about 5x1017/cm3 to about 2x1018/cm3. Hydrogen sulfide is used for n-type dopant in the substrate at a concentration level in the range of about 1x1018/cm3.
公开日期	1993-10-26
申请日期	1992-04-03
状态	失效
内容类型	专利
源URL	[http://ir.opt.ac.cn/handle/181661/46186]
专题	半导体激光器专利数据库
作者单位	CALIFORNIA INSTITUTE OF TECHNOLOGY A CORP. OF CALIFORNIA
推荐引用方式 GB/T 7714	FOROUHAR, SIAMAK,LARSSON, ANDERS G.,KSENDZOV, ALEXANDER,et al. Strained layer InP/InGaAs quantum well laser. US5257276. 1993-10-26.

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