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	Unipolar semiconductor laser
	CAPASSO, FEDERICO; CHO, ALFRED Y.; FAIST, JEROME; HUTCHINSON, ALBERT L.; LURYI, SERGE; SIRTORI, CARLO; SIVCO, DEBORAH L.
	1995-10-10
著作权人	AT&T IPM CORP.
专利号	US5457709
国家	美国
文献子类	授权发明
其他题名	Unipolar semiconductor laser
英文摘要	This application discloses, to the best of our knowledge, the first unipolar laser. An exemplary embodiment of the laser was implemented in the GaInAs/AlInAs system and emits radiation of about 4.2 mu m wavelength. Embodiments in other material systems are possible, and the lasers can be readily designed to emit at a predetermined wavelength in a wide spectral region. We have designated the laser the "quantum cascade" (QC) laser. The QC laser comprises a multilayer semiconductor structure that comprises a multiplicity of essentially identical undoper "active" regions, a given active region being separated from an adjoining one by a doped "energy relaxation" region. In a currently preferred embodiment each active region comprises three coupled quantum wells designed to facilitate attainment of population inversion. In the currently preferred embodiment the energy relaxation regions are digitally graded gap regions. However, other energy relaxation regions are possible. The unipolar plasma in a unipolar laser can be manipulated by means of an electric "control" field, facilitating, for instance, beam steering or external control of the modal gain of the laser. Means for accomplishing this are discussed.
公开日期	1995-10-10
申请日期	1994-04-04
状态	失效
内容类型	专利
源URL	[http://ir.opt.ac.cn/handle/181661/46163]
专题	半导体激光器专利数据库
作者单位	AT&T IPM CORP.
推荐引用方式 GB/T 7714	CAPASSO, FEDERICO,CHO, ALFRED Y.,FAIST, JEROME,et al. Unipolar semiconductor laser. US5457709. 1995-10-10.

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