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	Optical semiconductor device with InP
	ITAGAKI, TAKUSHI; SUZUKI, DAISUKE; KIMURA, TATSUYA
	1999-06-15
著作权人	MITSUBISHI DENKI KABUSHIKI KAISHA
专利号	US5912475
国家	美国
文献子类	授权发明
其他题名	Optical semiconductor device with InP
英文摘要	An optical semiconductor device includes an n-type InP substrate having top and bottom surfaces; a stripe-shaped mesa structure including an n-type cladding layer, a multi quantum well layer, and a p-type first upper cladding layer disposed on the top surface of the substrate; a first layer of a semi-insulating material, an n-type InP hole blocking layer having a carrier concentration equal to or less than 4x1018 cm-3 and more than 1x1018 cm-3, and a second layer of the semi-insulating material disposed burying the mesa structure; a second p-type cladding layer and a p-type contact layer disposed on the mesa structure and on the second layer of the semi-insulating material, and p side electrodes spaced from each other in a stripe direction of the mesa structure, disposed on the p-type contact layer; and an n side electrode disposed on the bottom surface of the substrate. Therefore, an optical semiconductor device is available which has superior element isolation characteristics and broad modulation bandwidth, and enables the individual elements to operate with the utmost performance.
公开日期	1999-06-15
申请日期	1996-12-17
状态	失效
内容类型	专利
源URL	[http://ir.opt.ac.cn/handle/181661/45982]
专题	半导体激光器专利数据库
作者单位	MITSUBISHI DENKI KABUSHIKI KAISHA
推荐引用方式 GB/T 7714	ITAGAKI, TAKUSHI,SUZUKI, DAISUKE,KIMURA, TATSUYA. Optical semiconductor device with InP. US5912475. 1999-06-15.

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